unisonic technologies co., ltd pzt5551 npn silicon transistor www.unisonic.com.tw 1of 4 copyright ? 2005 unisonic technologies co., ltd qw-r207-007,d high voltage switching transistor features * high collector-emitter voltage: v ceo =160v *high current gain sot-223 1 *pb-free plating product number:pzt5551l ordering information order number pin assignment normal lead free plating package 1 2 3 packing pzt5551-x-aa3-r pzt5551l-x-aa3-r sot-223 b c e tape reel pzt5551l-x-aa3-r (1)packing type (2)package type (3)rank (4)lead plating (1) r: tape reel (2) aa3: sot-223 (3) x: refer to classification of h fe (4) l: lead free plating, blank: pb/sn
pzt5551 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r207-007,d absoluate maxium ratings (ta = 25
) parameter symbol ratings unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6 v dc collector current i c 600 ma power dissipation p c 2 w operating junction temperature t j +150
storage temperature t stg -65 ~ +150
note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. thermal data parameter symbol ratings unit thermal resistance ja 62.5
/w electrical characteristics (ta= 25 ,
unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 180 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 160 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =120v, i e =0 50 na emitter cut-off current i ebo v be =4v, ic=0 50 na dc current gain(note) h fe v ce =5v, ic=1ma v ce =5v, ic=10ma v ce =5v, ic=50ma 80 80 80 160 400 i c =10ma, i b =1ma 0.15 collector-emitter saturation voltage v ce(sat) i c =50ma, i b =5ma 0.2 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma i c =50ma, i b =5ma 1 1 v current gain bandwidth product f t v ce =10v, ic=10ma, f=100mhz 100 300 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 6.0 pf noise figure nf i c =0.25ma, v ce =5v r s =1k ? , f=10hz ~ 15.7khz 8 db note: pulse test: pw<300 s, duty cycle<2% classification of h fe rank a b c range 80-170 150-240 200-400
pzt5551 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r207-007,d typical characterics dc current gain vs. collector current collector current, ic (ma) dc current gain, h fe 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 v ce =5v collector current vs . base- emitter voltage 10 0 10 1 10 2 collector current, ic (ma) base-emitter voltage (v) 0 0.2 0.4 0.6 0.8 1.0 v ce =5v collector current, ic (ma) 10 3 10 2 10 1 10 0 10 -1 saturation voltage (v) saturation voltage vs. collector current current gain -bandwidth product vs. collector current capacitance vs . collector-base voltage v ce (sat) v be (sat) ic=10*i b collector current, ic (ma) 10 0 10 1 10 2 10 3 current gain-bandwidth product, f t (mhz) 10 0 10 1 10 2 v ce =10v collector-base voltage (v) capacitance, cob (pf) 10 3 10 0 10 1 10 2 0 2 4 6 8 10 f=1mhz i e =0 10 3 10 1 10 0 10 -1 10 -2
pzt5551 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r207-007,d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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